[17p-Z28-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-Z28-4] Impact of GaAs Interlayer Thickness on the Radiative Efficiency of InGaAs/GaAsP

〇Maui Hino¹, Meita Asami¹, Kentaroh Watanabe², Yoshiaki Nakano¹, Masakazu Sugiyama^1,2 (1.The Univ. of Tokyo, 2.RCAST)

Keywords:quantum well, hetero interface, photoluminescence

In InGaAs/GaAsP strain compensation multiple quantum wells, it is important to control the hetero interface between compressive and strain for improving the radiative efficiency. Though it is known that the no strain GaAs interlayer insertion is effective, it is not clear that the influence of the interlayer thickness to the radiative efficiency. In this research, InGaAs/GaAsP MQW samples including GaAs interlayer with different thickness above or below InGaAs layer were fabricated by MOCVD and evaluated by photoluminescence.