The 68th JSAP Spring Meeting 2021

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-Z28-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Mar 17, 2021 1:30 PM - 6:00 PM Z28 (Z28)

Nobuhiko Ozaki(Wakayama Univ.), Toshiyuki Kaizu(Kobe Univ.), Yoriko Tominaga(Hiroshima Univ.), Kentaro Onabe

3:00 PM - 3:15 PM

▲ [17p-Z28-5] Impacts of growth parameters on the morphology of In(AlGa)P grown by high speed MOCVD

〇Hassanet Sodabanlu1, Akinori Ubukata2, Kentaroh Watanabe1, Takeyoshi Sugaya3, Yoshiaki Nakano4, Masakazu Sugiyama1,4 (1.RCAST, U. Tokyo, 2.Taiyo Nippon Sanso, 3.AIST, 4.School Eng, U. Tokyo)

Keywords:MOCVD, III-V semiconductor, InGaP