Investigation of Zn doping effect on surface roughness during InAs growth on GaAs substrate

Shota Nakagawa; Yuki Imamura; Tomohito Ohama; Koji Maeda; Masakazu Arai

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-Z28-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Mar 17, 2021 1:30 PM - 6:00 PM Z28 (Z28)

Nobuhiko Ozaki(Wakayama Univ.), Toshiyuki Kaizu(Kobe Univ.), Yoriko Tominaga(Hiroshima Univ.), Kentaro Onabe

3:30 PM - 3:45 PM

[17p-Z28-6] Investigation of Zn doping effect on surface roughness during InAs growth on GaAs substrate

〇Shota Nakagawa¹, Yuki Imamura¹, Tomohito Ohama¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

Keywords:MOVPE, Mid infrared

The effect of improving flatness by flowing DEZn when growing an InAs layer on a GaAs substrate by the MOVPE method was investigated. At 500 ° C growth, the flatness improved as the Zn flow rate increased. The thicker the film thickness, the more remarkable the effect.