4:15 PM - 4:30 PM
[17p-Z28-9] MBE Growth of QD Lasers on Multi-Functional Metamorphic Buffer Layer
Keywords:quantum dot, molecular beam epitaxy, quantum dot laser
In order to manufacture an optical device with industrial meaning, it is necessary to fabricate a device that meets the technical demand on commercially available substrates. Therefore, the approach of the metamorphic layer has attracted attention in the field of crystal growth. However, in the metamorphic layer, crystal defects occur due to lattice mismatch, which reduces device performance and lifetime. In addition, since an additional metamorphic layer is required as compared with a general lattice matched layer, the time cost and the material cost are increased at the same time.
In this paper, we have grown the quantum dot (QD) laser structure on the multi-functional metamorphic buffer (MFMB) layer , which has the three functions of crystal lattice expansion, laser cladding, and threading dislocation filter at the same time. We also have demonstrated laser oscillation by solving the problems of crystal defects and thickening of the existing metamorphic layer.
In this paper, we have grown the quantum dot (QD) laser structure on the multi-functional metamorphic buffer (MFMB) layer , which has the three functions of crystal lattice expansion, laser cladding, and threading dislocation filter at the same time. We also have demonstrated laser oscillation by solving the problems of crystal defects and thickening of the existing metamorphic layer.