[17p-Z29-1~10] 16.3 シリコン系太陽電池

▲ [17p-Z29-1] Recovery of PH₃ plasma-ion-implantation-induced damages in p-type amorphous silicon by flash lamp annealing

〇(M2)Ukei Riyuu¹、Huynh Thi Cam Tu¹、Noboru Yamaguchi²、Keisuke Ohdaira¹ (1.JAIST、2.ULVAC Inc.)

キーワード：Cat-CVD, Phosphine Plasma Ion Implantation, FLA

We investigated flash lamp annealing (FLA) to recover PH₃ plasma-ion-implantation-induced damages in p-a-Si. We prepare samples with a structure of p-a-Si/i-a-Si/n-c-Si/i-a-Si/SiN_x in which p-a-Si, i-a-Si and SiN_x films are formed by catalytic chemical vapor deposition (Cat-CVD), and then ion implantation and FLA are performed. Ion implantation induced damages in a-Si are completely recovered by FLA treatement in a very short duration, but there is no significant change if we increase the fluence. Therefore, the improvement in the passivation quality of a-Si after FLA is realized by the termination of dangling bonds by H. FLA with too high fluence excessively heats thesample surface, breaks the Si-H, and make the Si dangling bonds increase.