[17p-Z35-1~12] 13.9 Compound solar cells

[17p-Z35-8] Electronic Structure of CdS/Cu₂SnS₃Interface

〇Norio Terada¹, Takuya Hirayama¹, Guanzhong Chen¹, Yuya Ide¹, Isamu Miyanohara¹, Ryota Ohashi², Hideaki Araki² (1.Kagoshima Univ., 2.NIT, Nagaoka College)

Keywords:chalcogenide-based solar cell, Cu2SnS3, surface and interface

Compositional nature and electronic structure of surface of Cu₂SnS₃ [CTS] by sulfurization method and CdS/CTS interface has been characterized by direct and inverse photoemission spectroscopy [PES/IPES]. The experiments reveal that a major component of CTS surface has band a band gap energy of 0.9–1.0 eV, whereas a minor one has a low conduction band minimum. Cyclic experiments of step-deposition of CdS onto the CTS surfaceand in-situ PES/IPES measurements reveal that conduction band connection of the interface betweenthe main compoment of CTS surface and CdS has an adequate band offset for suppressing recombination loss.