9:45 AM - 10:00 AM
△ [18a-Z05-4] Study of Adsorption of H on Stepped SiC Surface during CVD using HCl
Keywords:silicon carbide, chemical vapor deposition, first-principles calculation
Oral presentation
15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)
Thu. Mar 18, 2021 9:00 AM - 12:00 PM Z05 (Z05)
Hiroaki Hanafusa(Hiroshima Univ.), Hirokuni Asamizu(ローム)
9:45 AM - 10:00 AM
Keywords:silicon carbide, chemical vapor deposition, first-principles calculation