Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[18a-Z05-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 18, 2021 9:00 AM - 12:00 PM Z05 (Z05)

Hiroaki Hanafusa(Hiroshima Univ.), Hirokuni Asamizu(ローム)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-Z05-1] Conversion from Immobile Basal Plane Dislocations to Mobile Combinations of Partial Dislocations during Epitaxial Growth of 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba Corp.)

9:15 AM - 9:30 AM

[18a-Z05-2] Influence of steps in the surface on Contraction of Basal Plane Partial Dislocations in 4H-SiC

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

9:30 AM - 9:45 AM

△ [18a-Z05-3] Depth estimation of basal plane dislocations in SiC by synchrotron X-ray topography

〇Fumihiro Fujie¹, Hongyu Peng², Tuerxun Ailihumaer², Balaji Raghothamachar², Michael Dudley², Shunta Harada¹, Miho Tagawa¹, Toru Ujihara^1,3 (1.Nagoya Univ., 2.Stony Brook Univ., 3.AIST GaN-OIL)

9:45 AM - 10:00 AM

△ [18a-Z05-4] Study of Adsorption of H on Stepped SiC Surface during CVD using HCl

〇Tomoya Kimura¹, Kenta Chokawa², Atsushi Oshiyama², Kenji Shiraishi^2,1 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

10:00 AM - 10:15 AM

△ [18a-Z05-5] Study on high concentration of boron and nitrogen co-doping in 4H-SiC by closed sublimation growth

〇Yoma Yamane¹, Lu Weifang¹, Kosuke Yanai¹, Satosi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research center)

10:15 AM - 10:30 AM

△ [18a-Z05-6] Optimization of voltage-controlled anodic oxidation and surface passivation for porous fluorescent SiC

〇Kousuke Yanai¹, Lu Weifang¹, Yoma Yamane¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki² (1.Meijo Univ., 2.Akasaki research center)

10:45 AM - 11:00 AM

[18a-Z05-7] Crystallinity and contact resistance of n-type 4H-SiC formed by thin-film laser doping with KrF excimer laser

〇Takuma Yasunami¹, Toshihumi kikuchi^2,3, Kaname imokawa³, Daisuke Nakamura², Hiroshi Ikenoue^2,3 (1.Kyushu Univ., 2.ISEE. Kyushu Univ., 3.Gigaphoton Next GLP)

11:00 AM - 11:15 AM

▲ [18a-Z05-8] Improve High-Temperature Reliability at 500℃ of Ni/Nb/4H-SiC Ohmic Contact
with CF₄:O₂ Surface Treatment

〇Cuong Van Vuong¹, Seiji Ishikawa^1,2, Tomonori Maeda^1,2, Hiroshi Sezaki^1,2, Tetsuya Meguro¹, Tadashi Sato¹, Shin-Ichiro Kuroki¹ (1.Research Institute for Nanodevice and Bio Systems, Hiroshima University, 2.Phenitec Semiconductor Corp)

11:15 AM - 11:30 AM

△ [18a-Z05-9] Impact of interfacial layer insertion on Schottky barrier height of low work function metal/n-type 4H-SiC interface

〇Takuma Doi^1,2, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Mitsuaki Shimizu², Osamu Nakatsuka^1,3 (1.Nagoya Univ., 2.AIST-NU GaN-OIL, 3.IMaSS, Nagoya Univ.)

11:30 AM - 11:45 AM

△ [18a-Z05-10] Analysis of Switching Characteristics of 4H-SiC Schottky PN Diodes

〇Ryo Kamewada¹, Kazutoshi Kojima², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.University of Tsukuba, 2.AIST)

11:45 AM - 12:00 PM

△ [18a-Z05-11] Fabrication and evaluation of 4H-SiC Schottky-pn-diode with high blocking voltage

〇(B)Yudai Kitamura¹, Ryo Kamewada¹, Kazutoshi Kojima², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba, 2.AIST)

Session information

[18a-Z05-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[18a-Z05-1] Conversion from Immobile Basal Plane Dislocations to Mobile Combinations of Partial Dislocations during Epitaxial Growth of 4H-SiC

[18a-Z05-2] Influence of steps in the surface on Contraction of Basal Plane Partial Dislocations in 4H-SiC

△ [18a-Z05-3] Depth estimation of basal plane dislocations in SiC by synchrotron X-ray topography

△ [18a-Z05-4] Study of Adsorption of H on Stepped SiC Surface during CVD using HCl

△ [18a-Z05-5] Study on high concentration of boron and nitrogen co-doping in 4H-SiC by closed sublimation growth

△ [18a-Z05-6] Optimization of voltage-controlled anodic oxidation and surface passivation for porous fluorescent SiC

[18a-Z05-7] Crystallinity and contact resistance of n-type 4H-SiC formed by thin-film laser doping with KrF excimer laser

▲ [18a-Z05-8] Improve High-Temperature Reliability at 500℃ of Ni/Nb/4H-SiC Ohmic Contact
with CF₄:O₂ Surface Treatment

△ [18a-Z05-9] Impact of interfacial layer insertion on Schottky barrier height of low work function metal/n-type 4H-SiC interface

△ [18a-Z05-10] Analysis of Switching Characteristics of 4H-SiC Schottky PN Diodes

△ [18a-Z05-11] Fabrication and evaluation of 4H-SiC Schottky-pn-diode with high blocking voltage

Authenticate

Session information

[18a-Z05-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[18a-Z05-1] Conversion from Immobile Basal Plane Dislocations to Mobile Combinations of Partial Dislocations during Epitaxial Growth of 4H-SiC

[18a-Z05-2] Influence of steps in the surface on Contraction of Basal Plane Partial Dislocations in 4H-SiC

△ [18a-Z05-3] Depth estimation of basal plane dislocations in SiC by synchrotron X-ray topography

△ [18a-Z05-4] Study of Adsorption of H on Stepped SiC Surface during CVD using HCl

△ [18a-Z05-5] Study on high concentration of boron and nitrogen co-doping in 4H-SiC by closed sublimation growth

△ [18a-Z05-6] Optimization of voltage-controlled anodic oxidation and surface passivation for porous fluorescent SiC

[18a-Z05-7] Crystallinity and contact resistance of n-type 4H-SiC formed by thin-film laser doping with KrF excimer laser

▲ [18a-Z05-8] Improve High-Temperature Reliability at 500℃ of Ni/Nb/4H-SiC Ohmic Contactwith CF4:O2 Surface Treatment

△ [18a-Z05-9] Impact of interfacial layer insertion on Schottky barrier height of low work function metal/n-type 4H-SiC interface

△ [18a-Z05-10] Analysis of Switching Characteristics of 4H-SiC Schottky PN Diodes

△ [18a-Z05-11] Fabrication and evaluation of 4H-SiC Schottky-pn-diode with high blocking voltage

Authenticate

▲ [18a-Z05-8] Improve High-Temperature Reliability at 500℃ of Ni/Nb/4H-SiC Ohmic Contact
with CF₄:O₂ Surface Treatment