[18a-Z05-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [18a-Z05-9] Impact of interfacial layer insertion on Schottky barrier height of low work function metal/n-type 4H-SiC interface

〇Takuma Doi^1,2, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Mitsuaki Shimizu², Osamu Nakatsuka^1,3 (1.Nagoya Univ., 2.AIST-NU GaN-OIL, 3.IMaSS, Nagoya Univ.)

Keywords:4H-SiC, Schottky barrier height, MIGS