[18a-Z11-1~13] 2.1 Radiation physics and Detector fundamentals

[18a-Z11-1] Radiation Hardness Evaluation and Radiation Degradation Model of ELT

〇Ryoichiro Yoshida¹, Arisa Kimura¹, Motoki Ando¹, Yuta Oshima,¹, Shinsuke Nabeya¹, Kenji Hirakawa¹, Masayuki Iwase¹, Munehiro Ogasawara¹, Takashi Yoda¹, Noboru Ishihara¹, Hiroyuki Ito¹ (1.Tokyo Tech)

Keywords:Total Ionizing Dose effect, MOSFET, Enclosed Layout Transistor

The characteristic of MOSFETs degrade due to a total ionizing dose (TID) effect in environments where they are exposed to radiation for long periods of time, such as space and nuclear power. The TID effect refers to the degradation of MOSFETs due to the accumulation of electric charge when exposed to radiation for a long time. In this report, the radiation effects of ELTs (Enclosed Layout Transistors), which are one of the countermeasures against TIDs, were evaluated for high cumulative doses up to 100 Mrad. In addition, a circuit simulator model that can represent the characteristic degradation of ELTs from the measured values was investigated. It was found that the characteristic degradation can be represented by incorporating the threshold voltage shift and carrier mobility decrease as radiation-dependent parameters in the circuit simulator.