[18a-Z13-1~11] 6.2 Carbon-based thin films

△ [18a-Z13-4] Mechanism of Diamond Heteroepitaxial Growth on MgO Substrate

〇(B)Ryo Masaki¹, Ryota Takaya¹, Seong-Woo Kim², Yuki Kawamata², Koji Koyama², Chandra Niloy¹, Kasu Makoto¹ (1.Saga Univ., 2.Adamant Namiki Precision.)

Keywords:heteroepitaxial diamond, MgO, nucleation

Diamond is expected to be an excellent power semiconductor device because it has a higher bandgap, dielectric breakdown electric field, and thermal conductivity than conventional Si, SiC, and GaN.However, for that purpose, a large-diameter wafer by heteroepitaxial growth of diamond is required.Heteroepitaxial growth on MgO substrates has been reported so far, but in this study, the initial growth mechanism was investigated by observing and measuring samples with different diamond growth times.