[18a-Z13-1~11] 6.2 Carbon-based thin films

△ [18a-Z13-8] Diamond MOSFETs with high concentration boron dope layer: Achievement of I_{DS max} = -1 A/mm and P_out = 3.6 W/mm

〇Fuga Asai¹, Ken Kudara¹, Masakazu Arai¹, Yukiko Suzuki¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.zaikai)

Keywords:Diamond, Boron dope, high frequency MOSFET

As a means for improving the output power of the FET, it is effective to improve the current value and withstand voltage and reduce the on-resistance. IIa (111) ALD-Al2O3 diamond MOSFET having a high concentration boron dope layer was fabricated on a single crystal diamond substrate, and the effect of gate width expansion and the boron-doped layer on the characteristics was evaluated. Achieving a maximum drain current density of -1.03 A / mm and an output power density of 3.6 W / mm, suggesting the possibility of a device with a boron dope layer.