[18a-Z13-1~11] 6.2 Carbon-based thin films

△ [18a-Z13-9] Achievement of High Breakdown Voltage (>580 V)
in Vertical-Type 2DHG Diamond MOSFET by p^--drift layer

〇(B)Kosuke Ota¹, Jun Tsunoda¹, Naoya Niikura¹, Aoi Morishita¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Kagami Memorial Research Institute for Materials Science and Technology.)

Keywords:MOSFET, Diamond, Vertical-type

We have reported a vertical-type 2DHG diamond MOSFET using two-dimensional hole gas (2DHG) induced by CH termination structure and high temperature ALD-Al2O3 independent of plane orientation, and high drain current density (> 20 kA/cm², 710 mA/mm) and low on-resistance (2.5 mΩ·cm2) have been achieved. In this study, we made the first (100) vertical 2DHG diamond MOSFET with a p-drift layer and achieved the largest breakdown voltage (V_B: -582 V) among the currently reported vertical diamond MOSFETs.