[18a-Z15-1~10] 13.7 Compound and power electron devices and process technology

△ [18a-Z15-6] Effect of recoil-implanted N atoms on defect formation in Mg-implanted GaN

〇(B)Kai C Herbert¹, Kazuki Shibata¹, Joel Asubar², Masaaki Kuzuhara¹ (1.Kwansei Gakuin Univ., 2.Univ. of Fukui)

Keywords:nitride semiconductor, GaN, ion implantation

Mg implantation into GaN is widely studied. In this work, we used a Boltzmann transport approach to calculate the depth distribution of implanted primary Mg ions and the recoil -implanted Ga and N atoms. As a result, we find that the stoichiometric disturbance is significant for Mg implanted GaN.