[18a-Z15-1~10] 13.7 Compound and power electron devices and process technology

△ [18a-Z15-7] Effect of beam current on the formation of defects by high-temperature implantation of Mg ions into GaN

〇Yuta Ito¹, Hirotaka Watanabe², Ando Yuto¹, Deki Manato⁴, Kano Emi², Nitta Shogo², Honda Yoshio², Ikarashi Nobuyuki², Tanaka Atsushi^2,3, Amano Hiroshi^1,2,3,4,5 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.NIMS, 4.VBL Nagoya Univ., 5.ARC Nagoya Univ.)

Keywords:ion implantation, Mg TEM, GaN

In the control of p-type conduction in arbitrary regions by Mg ion implantation, defects introduced during the implantation compensate for the acceptors, and Mg inactivation due to Mg segregation are problems. In our group, we have shown that the defects introduced during implantation are reduced by heating the sample to around 1100°C and performing ion implantation. In this experiment, we performed ion implantation at different beam current levels and observed the defect structure introduced into each sample by transmission electron microscopy.