Yuta Ito

Speaker, Author, Co-Author

Thu. Mar 18, 2021 9:15 AM - 12:00 PM Z15 (Z15)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18a-Z15-1~10] 13.7 Compound and power electron devices and process technology

11:00 AM - 11:15 AM

△ [18a-Z15-7] Effect of beam current on the formation of defects by high-temperature implantation of Mg ions into GaN

〇Yuta Ito¹, Hirotaka Watanabe², Ando Yuto¹, Deki Manato⁴, Kano Emi², Nitta Shogo², Honda Yoshio², Ikarashi Nobuyuki², Tanaka Atsushi^2,3, Amano Hiroshi^1,2,3,4,5 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.NIMS, 4.VBL Nagoya Univ., 5.ARC Nagoya Univ.)

▲