[18a-Z15-1~10] 13.7 Compound and power electron devices and process technology

[18a-Z15-9] Contribution to electrical properties of carrier recombination of Slow decay in GaN epilayers

〇(M1)Takuto Maeda¹, Takato Asada¹, Kenji Itou², Kazuyoshi Tomita², Tetsuo Narita², Tetsu Kachi³, Masashi Kato^1,3 (1.Nagoya Inst. of Tech., 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ.)

Keywords:semiconductor