[18a-Z16-1~8] 7.3 Micro/Nano patterning and fabrication

[18a-Z16-3] Computational study of pattern formation in extreme ultraviolet lithography

〇Masanori Koyama¹, Kyohei Imai¹, Masamitsu Shirai¹, Yoshihiko Hirai¹, Masaaki Yasuda¹ (1.Osaka Pref. Univ.)

Keywords:EUV lithography, Chemically amplified resist, Simulation

A molecular scale simulation of the pattern formation process for both deprotection and cross-linking type chemically amplified resists in extreme ultraviolet (EUV) lithography based on the stochastic approach are performed. The line edge roughness (LER) decreases with increasing EUV dose. When nonuniformity of both the acid distribution and chemical reaction is suppressed at higher dose, the LER decreases with decreasing resist molecular size.