[18a-Z16-1~8] 7.3 Micro/Nano patterning and fabrication

△ [18a-Z16-8] Dry Etching of Photo-Cured Masks for Area Selective Atomic Layer Deposition

〇Chiaki Miyajima¹, Shunya Ito¹, Masaru Nakagawa¹ (1.IMRAM, Tohoku Univ.)

Keywords:dry etching, atomic layer deposition, UV nanoimprinting

Atomic layer deposition (ALD) is one of the promising bottom-up technologies to integrate functional inorganic oxide layers on substrates by mutual doses of inorganic precursor and oxidant agents. Taking accounts of differences in deposition behavior of aluminum oxide between bare inorganic substrate and mask organic resin surfaces, we attempt to develop novel methods for area selective deposition by combining UV nanoimprinting and ALD. In this study, we achieved complete removal of UV-cured resin thin films after deposition of aluminum oxide by physical and chemical dry etching processes.