[18a-Z24-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18a-Z24-4] [Highlight]Stacking-fault-driven formation of atomically-abrupt heterointerfaces in III-V nanowires

〇Guoqiang Zhang^1,2, Tateno Kouta^1,2, Tawara Takehiko^1,2, Gotoh Hideki¹ (1.NTT BRL, 2.NTT NPC)

Keywords:semiconductor, nanowire, heterointerface

III-V compound semiconductor nanowires have been considered as next-generation building blocks. Atomically-abrupt heterointerfaces, as ideal structures, are quite challenging to be realized in III-V nanowires due to reservoir effect and interface diffusion. Stacking faults, which usually exist in bottom-up-synthesized III-V nanowires, are generally believed to be a kind of plane defect. In this study, we show stacking faults, despite the defect feature, can drive formation of atomically abrupt heterointerfaces in III-V nanowires. Furthermore, we have also clarified the formation mechanism.