Effect of n-GaN flat layer on InGaN/AlGaN MQWs in GaN-based nanocolumns

Jumpei Yamada; Tatsuya Honda; Keigo Yoshida; Rie Togashi; Ichiro Nomura; Tomohiro Yamaguchi; Tohru Honda; Katsumi Kishino

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-Z27-1~9] 15.4 III-V-group nitride crystals

Thu. Mar 18, 2021 9:00 AM - 11:30 AM Z27 (Z27)

Tsutomu Araki(Ritsumeikan Univ.), Atsushi Kobayashi(Univ. of Tokyo)

10:00 AM - 10:15 AM

[18a-Z27-5] Effect of n-GaN flat layer on InGaN/AlGaN MQWs in GaN-based nanocolumns

〇Jumpei Yamada¹, Tatsuya Honda¹, Keigo Yoshida², Rie Togashi¹, Ichiro Nomura¹, Tomohiro Yamaguchi², Tohru Honda², Katsumi Kishino¹ (1.Sophia Univ., 2.Kogakuin Univ.)

Keywords:Nanocolumns, MBE, InGaN

« Previous in this session
Next in this session »

▲