[18a-Z29-1~8] 16.3 Bulk, thin-film and other silicon-based solar cells

[18a-Z29-1] Effect of annealing on RPD-induced defect densities

〇(D)Tomohiko Hara¹, Taichi Tanaka¹, Yoshio Ohshita¹ (1.Toyota Technol. Ins.)

Keywords:reactive plasma deposition, Deep Level Transient Spectroscopy (DLTS), SiO2/Si interface

Recombination-active defects are induced into SiO₂/Si interface and bulk near inferface by reactive plasma deposition (RPD). In this study, effects of annealing on RPD-induced defect densities are studied using by deep level transient spectroscopy (DLTS). Obtained DLTS spectra have a peak and a long tail in each spectrum. Each signal intensities were decreased and relative intensity was changed by annealing at 200°C for 10 minutes. This indicates that the recovery rates by heat treatment differ depending on the defect type.