Oral presentation

[17p-Z29-1~10] 16.3 Bulk, thin-film and other silicon-based solar cells

Wed. Mar 17, 2021 1:30 PM - 4:15 PM Z29 (Z29)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

▲ [17p-Z29-1] Recovery of PH₃ plasma-ion-implantation-induced damages in p-type amorphous silicon by flash lamp annealing

〇(M2)Ukei Riyuu¹, Huynh Thi Cam Tu¹, Noboru Yamaguchi², Keisuke Ohdaira¹ (1.JAIST, 2.ULVAC Inc.)

1:45 PM - 2:00 PM

[17p-Z29-2] Evaluation of FF deterioration factor at electrode/transparent conductive oxide film interaface (II)

〇Tappei Nishihara¹, Kazuo Muramatsu², Kyotaro Nakamura³, Yoshio Ohshita³, Atsushi Ogura^1,4 (1.Meiji Univ., 2.NAMICS Corporation, 3.Toyota Tech. Inst., 4.Meiji Renewable Energy Institute)

2:00 PM - 2:15 PM

[17p-Z29-3] Improved silicon heterojunction solar cells by applying nanocrystalline silicon hole-selective contacts: Impact of nanocrystalline growth on cell performance

Hiroshi Umishio¹, Hitoshi Sai¹, Takashi Koida¹, 〇Takuya Matsui¹ (1.AIST)

2:15 PM - 2:30 PM

[17p-Z29-4] Development of Si solar cells featuring TiO_x hole-selective passivating contacts

〇Takuya Matsui¹, Martin Bivour², Martin Hermle², Hitoshi Sai¹ (1.AIST, 2.Fraunhofer-ISE)

2:30 PM - 2:45 PM

[17p-Z29-5] Development of Periodic Texture for Thin SHJ Solar Cells

〇Daiji Kanematsu¹, Hitoshi Sai², Terakawa Akira¹ (1.Panasonic, 2.AIST)

3:00 PM - 3:15 PM

[17p-Z29-6] Analysis of Edge Effect in Si Hetero-junction Solar Cells

〇Yukimi Ichikawa¹, Tasukasa Takamura¹, Ryosuke Ishikawa¹, Makoto Konagai¹ (1.Tokyo City Univ.)

3:15 PM - 3:30 PM

[17p-Z29-7] Effects of intrinsic a-Si:H bilayers in silicon heterojunction solar cells

〇Hitoshi Sai¹, Hung-Jung Hsu², Po-Wei Chen², Pei-Ling Chen², Takuya Matsui¹ (1.AIST, 2.NCTU)

3:30 PM - 3:45 PM

[17p-Z29-8] Ultra-violet light-induced degradation behavior of B-doped and Ga-doped silicon PERC solar cell

〇Katsuto Tanahashi¹, Katsuhiko Shirasawa¹, Shunsuke Heito², Norikazu Itou², Kouichirou Niira², Hidetaka Takato¹ (1.AIST, 2.KYOCERA)

3:45 PM - 4:00 PM

[17p-Z29-9] Effect of Ga concentration on electrical characteristics of Ga-doped silicon PERC solar cell

〇Katsuto Tanahashi¹, Katsuhiko Shirasawa¹, Shunsuke Heito², Norikazu Itou², Kouichirou Niira², Hidetaka Takato¹ (1.AIST, 2.KYOCERA)

4:00 PM - 4:15 PM

[17p-Z29-10] Investigation of LeTID in B-doped Mono-like Si PERC Solar Cells

〇Yuji Ino¹, Yuta Irie², Shunsuke Heito², Norikazu Itou², Kouichirou Niira², Katsuhiko Shirasawa¹, Hidetaka Takato¹ (1.AIST, 2.Kyocera Corp.)

Oral presentation

[18a-Z29-1~8] 16.3 Bulk, thin-film and other silicon-based solar cells

Thu. Mar 18, 2021 10:00 AM - 12:15 PM Z29 (Z29)

Atsushi Ogura(Meiji Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:00 AM - 10:15 AM

[18a-Z29-1] Effect of annealing on RPD-induced defect densities

〇(D)Tomohiko Hara¹, Taichi Tanaka¹, Yoshio Ohshita¹ (1.Toyota Technol. Ins.)

10:15 AM - 10:30 AM

△ [18a-Z29-2] Realization of high-performance passivating contact via Bayesian optimization: Application to TiO_x/crystalline silicon heterostructure

〇Shinsuke Miyagawa¹, Kazuhiro Gotoh¹, Kentaro Kutsukake², Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ., 2.AIP, RIKEN)

10:30 AM - 10:45 AM

[18a-Z29-3] Evaluation of field-effect passivation of ALD-grown oxides using THz TDS

〇Toshimitsu Mochizuki¹, Kenshiro Usuki¹, Katsuto Tanahashi¹, Hidetaka Takato¹, Iwao Kawayama², Masayoshi Tonouchi³ (1.AIST, 2.Kyoto Univ., 3.ILE, Osaka Univ.)

10:45 AM - 11:00 AM

[18a-Z29-4] Fabrication of TOPCon structure using sputtered a-Si:H layers

〇Takumi Miyamoto¹, Yuta Shiratori^1,2, Shinsuke Miyajima¹ (1.Tokyo Tech, 2.JSPS research Fellow (DC1))

11:15 AM - 11:30 AM

[18a-Z29-5] Solar cell application of silicon-nanocrystals-embedded silicon oxide passivating contacts

〇Ryohei Tsubata¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ.)

11:30 AM - 11:45 AM

[18a-Z29-6] Effect of hydrogenation process on passivation performance of silicon nano-crystal/silicon oxide compound layer

〇Masashi Matsumi¹, Kazuhiro Gotoh², Markus Wilde³, Yasuyoshi Kurokawa², Katsuyuki Fukutani³, Noritaka Usami² (1.School of Eng., Nagoya Univ., 2.Graduate School of Eng., Nagoya Univ., 3.Institute of Industrial Sci., The Univ. of Tokyo)

11:45 AM - 12:00 PM

[18a-Z29-7] Surface passivation effect of SiO2 film prepared by ALD method

〇(D)Kenshiro Usuki^1,2, Toshimitsu Mochizuki², Tanahashi Katsuto², Hidetaka Takato², Katsuhiko Yamaguchi¹ (1.Fukushima Univ., 2.AIST)

12:00 PM - 12:15 PM

[18a-Z29-8] Hydrogenation for tunnel nitride passivation contacts using a Cat-CVD chamber

〇Yuli Wen¹, Thi Cam Tu Huynh¹, Keisuke Ohdaira¹ (1.JAIST)

Oral presentation

[18p-Z29-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

Thu. Mar 18, 2021 1:30 PM - 4:00 PM Z29 (Z29)

Shinsuke Miyajima(Tokyo Tech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[18p-Z29-1] Investigation of electrical characteristics of triple points in multicrystalline silicon via 3D carrier simulation

〇(M2)Kazuki Mitamura¹, Kentaro Kutsukake², Takuto Kojima³, Noritaka Usami¹ (1.Eng., Nagoya Univ., 2.AIP, RIKEN, 3.Inf., Nagoya Univ.)

1:45 PM - 2:00 PM

[18p-Z29-2] Effects of surface damages on current-modulating resistivity measurement of Si wafers

〇Kosuke Hara¹, Yuka Tsukakoshi¹, Keito Makise¹, Keisuke Arimoto¹, Yusuke Hoshi², Satoru Matsushima³ (1.Univ. of Yamanashi, 2.Tokyo City Univ., 3.PSTS)

2:00 PM - 2:15 PM

[18p-Z29-3] Study of three-terminal GaAs/Si tandem solar cells with interdigitated back contacts

〇Takeshi Tayagaki¹, Kikuo Makita¹, Tomihisa Tachibana¹, Hidenori Mizuno¹, Ryuji Oshima¹, Hidenao Takato¹, Takeyoshi Sugaya¹ (1.AIST)

2:15 PM - 2:30 PM

[18p-Z29-4] Comparative study of the non-planar silicon photovoltaic mini-modules

〇Takeshi Tayagaki¹, Haruya Shimura¹, Ayumi Sasaki¹, Masahiro Yoshita¹ (1.AIST)

2:30 PM - 2:45 PM

[18p-Z29-5] Performance simulation of bifacial sextuple-junction amorphous Si solar cells and the optimization of their structure

〇Hiroshi Noge¹, Makoto Konagai¹, Ryousuke Ishikawa¹ (1.Tokyo City Univ.)

3:00 PM - 3:15 PM

[18p-Z29-6] Study of Fast Recovery Process on PID affected Polycrystalline-Silicon-Based-PVModules (II)

〇Yasushi Sobajima¹, Shingo Hashimoto¹, Yuto Maehara¹, Syuichi Nonomura¹ (1.Gifu Univ.)

3:15 PM - 3:30 PM

[18p-Z29-7] Effect of pre-annealing on the potential-induced degradation of silicon heterojunction photovoltaic modules

〇Jiaming Xu¹, Atsushi Masuda², Keisuke Ohdaira¹ (1.JAIST, 2.Niigata Univ.)

3:30 PM - 3:45 PM

[18p-Z29-8] Change in the leakage current of n-type front-emitter crystalline Si photovoltaic modules during PID test

〇Rongrong Zhao¹, Atsushi Masuda², Keisuke Ohdaira¹ (1.JAIST, 2.Niigata Univ.)

3:45 PM - 4:00 PM

[18p-Z29-9] Annual Trends of Indoor Output Measurement Results of High-Efficiency Crystalline Silicon Photovoltaic Modules Exposed Outdoors in Tosu City

〇Yasuo Chiba¹, Ritsuko Sato¹, Sungwoo Choi¹, Minoru Akitomi¹, Tetsuyuki Ishii², Atsushi Masuda³ (1.AIST, 2.CRIEPI, 3.Niigata Univ.)

Poster presentation

[18p-P09-1~5] 16.3 Bulk, thin-film and other silicon-based solar cells

Thu. Mar 18, 2021 5:00 PM - 5:50 PM P09 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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5:00 PM - 5:50 PM

[18p-P09-1] Effect of the prior application of reverse bias on the potential-induced degradation of n-type crystalline Si photovoltaic modules

〇Deqin Wu¹, Huynh Thi Cam Tu¹, Ohdaira Keisuke¹ (1.JAIST)

5:00 PM - 5:50 PM

[18p-P09-2] Changes in the properties of Cat-CVD SiN_x by fire-through annealing

〇Toshiki Itasaka¹, Thi Cam Tu Huynh¹, Keisuke Ohdaira¹ (1.JAIST)

5:00 PM - 5:50 PM

[18p-P09-3] Investigation of In Mole Fraction in Indium Gallium Nitride for Electron Selective Layer of Silicon Solar Cell

〇(D)Yuta Shiratori^1,2, Shinsuke Miyajima¹ (1.Tokyo Tech., 2.JSPS research Fellow)

5:00 PM - 5:50 PM

[18p-P09-4] Evaluation of electrical characteristics of silicon heterojunction solar cells using molybdenum oxide prepared by wet process

〇Syota Kajiya¹, Sora Satou¹, Ryosuke Watanabe¹ (1.Hirosaki Univ.)

5:00 PM - 5:50 PM

[18p-P09-5] Characteristics of Si heterojunction solar cells with single and stacked amorphous Si films deposited by Cat-CVD

〇Yuki Terakado¹, Thi Cam Tu Huynh¹, Keisuke Ohdaira¹ (1.JAIST)

Sessions

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[17p-Z29-1~10] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [17p-Z29-1] Recovery of PH₃ plasma-ion-implantation-induced damages in p-type amorphous silicon by flash lamp annealing

[17p-Z29-2] Evaluation of FF deterioration factor at electrode/transparent conductive oxide film interaface (II)

[17p-Z29-3] Improved silicon heterojunction solar cells by applying nanocrystalline silicon hole-selective contacts: Impact of nanocrystalline growth on cell performance

[17p-Z29-4] Development of Si solar cells featuring TiO_x hole-selective passivating contacts

[17p-Z29-5] Development of Periodic Texture for Thin SHJ Solar Cells

[17p-Z29-6] Analysis of Edge Effect in Si Hetero-junction Solar Cells

[17p-Z29-7] Effects of intrinsic a-Si:H bilayers in silicon heterojunction solar cells

[17p-Z29-8] Ultra-violet light-induced degradation behavior of B-doped and Ga-doped silicon PERC solar cell

[17p-Z29-9] Effect of Ga concentration on electrical characteristics of Ga-doped silicon PERC solar cell

[17p-Z29-10] Investigation of LeTID in B-doped Mono-like Si PERC Solar Cells

[18a-Z29-1~8] 16.3 Bulk, thin-film and other silicon-based solar cells

[18a-Z29-1] Effect of annealing on RPD-induced defect densities

△ [18a-Z29-2] Realization of high-performance passivating contact via Bayesian optimization: Application to TiO_x/crystalline silicon heterostructure

[18a-Z29-3] Evaluation of field-effect passivation of ALD-grown oxides using THz TDS

[18a-Z29-4] Fabrication of TOPCon structure using sputtered a-Si:H layers

[18a-Z29-5] Solar cell application of silicon-nanocrystals-embedded silicon oxide passivating contacts

[18a-Z29-6] Effect of hydrogenation process on passivation performance of silicon nano-crystal/silicon oxide compound layer

[18a-Z29-7] Surface passivation effect of SiO2 film prepared by ALD method

[18a-Z29-8] Hydrogenation for tunnel nitride passivation contacts using a Cat-CVD chamber

[18p-Z29-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

[18p-Z29-1] Investigation of electrical characteristics of triple points in multicrystalline silicon via 3D carrier simulation

[18p-Z29-2] Effects of surface damages on current-modulating resistivity measurement of Si wafers

[18p-Z29-3] Study of three-terminal GaAs/Si tandem solar cells with interdigitated back contacts

[18p-Z29-4] Comparative study of the non-planar silicon photovoltaic mini-modules

[18p-Z29-5] Performance simulation of bifacial sextuple-junction amorphous Si solar cells and the optimization of their structure

[18p-Z29-6] Study of Fast Recovery Process on PID affected Polycrystalline-Silicon-Based-PVModules (II)

[18p-Z29-7] Effect of pre-annealing on the potential-induced degradation of silicon heterojunction photovoltaic modules

[18p-Z29-8] Change in the leakage current of n-type front-emitter crystalline Si photovoltaic modules during PID test

[18p-Z29-9] Annual Trends of Indoor Output Measurement Results of High-Efficiency Crystalline Silicon Photovoltaic Modules Exposed Outdoors in Tosu City

[18p-P09-1~5] 16.3 Bulk, thin-film and other silicon-based solar cells

[18p-P09-1] Effect of the prior application of reverse bias on the potential-induced degradation of n-type crystalline Si photovoltaic modules

[18p-P09-2] Changes in the properties of Cat-CVD SiN_x by fire-through annealing

[18p-P09-3] Investigation of In Mole Fraction in Indium Gallium Nitride for Electron Selective Layer of Silicon Solar Cell

[18p-P09-4] Evaluation of electrical characteristics of silicon heterojunction solar cells using molybdenum oxide prepared by wet process

[18p-P09-5] Characteristics of Si heterojunction solar cells with single and stacked amorphous Si films deposited by Cat-CVD

Authenticate

Sessions

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[17p-Z29-1~10] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [17p-Z29-1] Recovery of PH3 plasma-ion-implantation-induced damages in p-type amorphous silicon by flash lamp annealing

[18a-Z29-1~8] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [18a-Z29-2] Realization of high-performance passivating contact via Bayesian optimization: Application to TiOx/crystalline silicon heterostructure

[18p-Z29-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

[18p-P09-1~5] 16.3 Bulk, thin-film and other silicon-based solar cells

Authenticate

▲ [17p-Z29-1] Recovery of PH₃ plasma-ion-implantation-induced damages in p-type amorphous silicon by flash lamp annealing

△ [18a-Z29-2] Realization of high-performance passivating contact via Bayesian optimization: Application to TiO_x/crystalline silicon heterostructure