[18a-Z29-1~8] 16.3 Bulk, thin-film and other silicon-based solar cells

[18a-Z29-3] Evaluation of field-effect passivation of ALD-grown oxides using THz TDS

〇Toshimitsu Mochizuki¹, Kenshiro Usuki¹, Katsuto Tanahashi¹, Hidetaka Takato¹, Iwao Kawayama², Masayoshi Tonouchi³ (1.AIST, 2.Kyoto Univ., 3.ILE, Osaka Univ.)

Keywords:terahertz, surface passivation, atomic layer deposition

Field effect passivation of Si surfaces with tunnelling oxide and alumina-Si oxide multilayer films, where C-V method is not applicable, was evaluated by THz time-domain spectroscopy using laser terahertz emission microscope (LTEM). The inverse correlation with the minority carrier lifetime, which was considered to be due to the screening effect, was observed in the sample with the Si oxide film, and the inversion of the THz waveform, which was considered to be due to the prevention of the electrification of the alumina multilayer film by the Si oxide film in the sample with the thick Si oxide film, was observed in the alumina multilayer film.