[18a-Z33-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-Z33-3] Flexible transparent electrode with a high bending resistance based on hybrid of ITO micro-structure and metal grid

〇Akira Watanabe¹, Ashiqur Rahman¹, Megumi Komada² (1.IMRAM, Tohoku Univ., 2.Sumitomo Chemical)

Keywords:flexible transparent electrode, ITO (Indium Tin Oxide), metallic micro-grid

An ITO (Indium Tin Oxide) transparent electrode has an excellent conductivity and transparency, but the problem is that an ITO film is easilly cracked by stress during bending, which causes the serious increase in resistivity. In this study, we have developed a flexible transparent electrode based on hybrid of ITO micro-structure and metal grid with a linewidth less than 5 micrometer which is visually transparent. The flexible transparent electrode showed a high transmittance over 80% and an excellent retention of conductivity during bending with radius less than 2.5 mm.