[18p-P03-1~4] 3.11 Photonic structures and phenomena

[18p-P03-1] Evaluation of internal defects in SOI substrates using Near-Infrared low temperature Cathodoluminescence

〇(B)Shunsuke Ikuta¹, Masanao Fujimoto¹, Takashi Asano², Susumu Noda², Yasushi Takahashi¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

Keywords:SOI substrates, Near-Infrared low temperature Cathodoluminescence, internal defects

Near-infrared low-temperature cathodoluminescence measurements were performed on two types of SOI substrates.
Also, nanocavities for silicon Raman lasers were fabricated on each substrates and statistical evaluation of Q-values was performed.