[18p-P03-1~4] 3.11 Photonic structures and phenomena

[18p-P03-4] Temperature dependence of Raman silicon nanocavity laser fabricated by CMOS-compatible process

〇YASUTAKA OKADA¹, FUJIMOTO MASANAO¹, OTA YUJI¹, OKANO MAKOTO², TAKAHASHI YASUSHI¹ (1.Osaka Pref. Univ., 2.AIST)

Keywords:Si Raman laser

We have developed a silicon Raman laser with a high-Q nanocavity, which has an ultrasmall size and continuous room-temperature oscillation with an ultralow threshold. We have demonstrated that the laser can be fabricated on a 300 mm silicon substrate using a CMOS-compatible process. In the future, we plan to promote the use of the laser for research in different fields. For this purpose, it is desirable that the laser can operate at temperatures higher than room temperature. We have measured the oscillation performance of this laser in the range of room temperature to 60 °C.