[18p-Z04-1~9] Materials Science and Advanced Electronics Created by Singularity

[18p-Z04-1] Synthesis and Application of Nitride Crystals Using Non-Equilibrium States

〇Hiroshi Fujioka¹, Kohei Ueno¹, Atsushi Kobayashi¹ (1.IIS, The University of Tokyo)

Keywords:nitride semiconductor, Epitaxial growth

For the crystal growth of nitride semiconductors with large interatomic bonding energy, non-equilibrium processes using a combination of electrical discharge and ultraviolet light irradiation are expected to be effective. In the crystal growth technique using pulsed sputtering, low temperature crystal growth can be achieved by controlling the supply of group III and group V elements, and the introduction of compensating defects can be suppressed by vacuum ultraviolet light irradiation. In this talk, we will report the recent results on the properties of nitride crystals prepared by this technique and their applications to various devices.