Symposium (Oral)

[18p-Z04-1~9] Materials Science and Advanced Electronics Created by Singularity

Thu. Mar 18, 2021 1:30 PM - 6:30 PM Z04 (Z04)

Yasuo Koide(NIMS), Hiroshi Fujioka(IIS, The University of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[18p-Z04-1] Synthesis and Application of Nitride Crystals Using Non-Equilibrium States

〇Hiroshi Fujioka¹, Kohei Ueno¹, Atsushi Kobayashi¹ (1.IIS, The University of Tokyo)

2:00 PM - 2:30 PM

[18p-Z04-2] Fabrication of AlN Templates with Dislocation Density of 10⁷ cm^-2 by High-temperature Annealing

〇Hideto Miyake^1,2, Kanako Shojiki², Shiyu Xiao¹, Kenjiro Uesugi^3,1, Shigeyuki Kuboya³ (1.Grad. School of RIS, Mie Univ., 2.Grad. School of Eng. 2, Mie Univ., 3.SPORR 3, Mie Univ.)

2:30 PM - 3:00 PM

[18p-Z04-3] Growth of multi-quantum shell-based nanostructure and its application to optoelectronic devices

〇Satoshi Kamiyama¹, Testsuya Takeuchi¹, Motoaki Iwaya¹, Isamu AKASAKI^1,2 (1.Meijo University, 2.Nagoya University)

3:15 PM - 3:45 PM

[18p-Z04-4] Examination of growth mechanism of metastable phases of Ga₂O₃ and In₂O₃

〇Yoshinao Kumagai¹, Ken Goto¹, Rie Togashi², Tomohiro Yamaguchi³, Hisashi Murakami¹ (1.Tokyo Univ. Agric. & Tech., 2.Sophia Univ., 3.Kogakuin Univ.)

3:45 PM - 4:15 PM

[18p-Z04-5] Singular Structure Formation by Surface and Interface Control

〇Tomonori Ito¹ (1.Mie Univ.)

4:15 PM - 4:45 PM

[18p-Z04-6] Development of Diamond Electron Devices using III-Nitride Nanolaminate Singularity Structure

〇Yasuo Koide¹, Jiangwei Liu¹, Masataka Imura¹, Meiyong Liao¹ (1.NIMS)

5:00 PM - 5:30 PM

[18p-Z04-7] Recent Progress on GaAs and GaN-based terahertz quantum-cascade lasers

〇Hideki Hirayama¹, Tsung-Tse Lin¹, Li Wang¹, Ke Wang^1,2, Mingxi Chen¹ (1.RIKEN, 2.Nanjing Univ.)

5:30 PM - 6:00 PM

[18p-Z04-8] Interface properties of MOS structures on nonpolar GaN surface

〇Tamotsu Hashizume¹ (1.Hokkaido Univ.)

6:00 PM - 6:30 PM

[18p-Z04-9] Effect of Dislocations in Nitride Semiconductors on Device Characteristics

〇Yoshio Honda¹, Atsushi Tanaka¹, Seiya Kawasaki², Hirotaka Watanabe¹, Hiroshi Amano^1,3,4 (1.IMaSS, Nagoya Univ., 2.Dept. of Elec., Nagoya Univ., 3.ARC, Nagoya Univ, 4.VBL, Nagoya Univ)

Sessions

Symposium » Materials Science and Advanced Electronics Created by Singularity