[18p-Z04-1~9] Materials Science and Advanced Electronics Created by Singularity

[18p-Z04-7] Recent Progress on GaAs and GaN-based terahertz quantum-cascade lasers

〇Hideki Hirayama¹, Tsung-Tse Lin¹, Li Wang¹, Ke Wang^1,2, Mingxi Chen¹ (1.RIKEN, 2.Nanjing Univ.)

Keywords:Quantum-Cascade Laser, nitride semiconductor, MBE

We have developed GaAs and GaN-based high-performance THz-QCL. By solving some limiting factors of the inter-subband transition optical gain, a dramatic improvement in optical gain and room temperature optical gain were obtained from the analysis. A GaAs-based THz-QCL was fabricated to achieve a high output operation over 1 W. We also clarified that room temperature optical gain can be obtained for a GaN-based THz-QCL, and fabricated a GaN / AlGaN THz-QCL based on the analysis.