[18p-Z04-1~9] Materials Science and Advanced Electronics Created by Singularity

[18p-Z04-3] Growth of multi-quantum shell-based nanostructure and its application to optoelectronic devices

〇Satoshi Kamiyama¹, Testsuya Takeuchi¹, Motoaki Iwaya¹, Isamu AKASAKI^1,2 (1.Meijo University, 2.Nagoya University)

Keywords:GaN, Nanowire, Multi-quantum shell

A core-shell structure consisting of a GaN nanowire and a GaInN-based multi-quantum shell (MQS) has a great potential to provide a significant innovation in optoelectronic devices. It includes a non-polar plane on the side wall of nanowire, which could eliminate the quantum confined Stark effect and improve a current injection. The arrangement of the tiny crystals, however, causes a difficulty for uniform and reproducible crystal growth. Formation of the tunnel junction, which is necessary for uniform current injection toward the non-polar plane, is also a great issue. Thus, in this presentation, crystal growth and device application of the MQS structures is discussed.