[18p-Z05-1~16] 15.6 Group IV Compound Semiconductors (SiC)

△ [18p-Z05-10] Characterization method of near-interface trap on 4H-SiC MOS interface focusing on the increase of carrier trapping time constant at low temperature

〇(M1)Rimpei Hasegawa¹, Kouji Kita¹ (1.Tokyo Univ.)

Keywords:SiC MOS interface, Near-interface Trap, Low Temperature CV measurement

Dit is generally evaluated at the MOS interface, but most of them do not correctly detect the near-interface trap (NIT) with a long time constant existing in the oxide layer,which is about nm away from the interface. The existence of NIT with a time constant of ms ~ s is always overlooked. Therefore, in this study, we evaluated the hysteresis of the CV curve at low temperature where the time constant ofcapturing of NIT increases for SiC p-type MOS capacitors, and evaluated traps that was overlooked at room temperature.