2:00 PM - 2:15 PM
[18p-Z05-3] Visualization of transient variation of internal temperature distribution during SiC-MOSFET operating using Optical-Interference Contactless Thermometer (OICT)
Keywords:OICT, SiC
Thermal design is indispensable for device fabrication, and although heat conduction is analyzed by various models, it is not possible to directly measure the exothermic process inside the device. In this study, we attempted to visualize the internal heat diffusion process during the operation of SiC-MOSFET by applying the Optical-Interference Contactless Thermometer (OICT) we developed.