[18p-Z23-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[18p-Z23-4] Zeeman Splitting in GaN:Eu thin films and self-organized nanocolumns grown by RF-MBE

〇Tomohiro Okuno¹, Ryota Onoda¹, Hiroto Sekiguchi², Akihiro Wakahara², Toshihiro Nakaoka¹ (1.Sophia Univ., 2.Toyohashi Tech.)

Keywords:Zeeman Splitting, GaN:Eu thin films, self-organized nanocolumns

The rare-earth atom Eu doped in GaN shows high efficiency red luminescence and is expected to be a next-generation light-emitting device. However, there are still many unanswered questions such as the differences between optical spectra grown by MBE and MOCVD. We have reported the environment-sensitive Zeeman splitting in GaN:Eu grown by MBE. In this study, we will show the Zeeman splitting in the emission peak at 1.998 eV, which is characteristic to GaN:Eu thin films, and is not observed in self-organized nanocolumns.