[18p-Z24-1~14] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[18p-Z24-5] Study on instantaneous heating during deposition of amorphous silicon by plasma CVD

〇(M1)Taishi Nojima¹, Takuma Sato¹, Hiroaki Hanafusa¹, Seiitirou Higashi¹ (1.Hiroshima Univ.)

Keywords:semiconductor, amorphous silicon, plasma CVD

In recent years, the pixel drive current of flat panel displays has increased, and high-crystal Si TFTs have been demanded. As a method for forming a crystalline Si film, in addition to rapid heat treatment after a-Si deposition, crystalline Si on an insulator. However, there is a problem that it is difficult to suppress the amorphous incubation layer at the Si / SiO2 interface. Therefore, in this study, pulse Joule heating is used during a-Si deposition by the plasma CVD method. We are developing a process to control the growth of the a-Si layer.