[19a-P04-1~9] 8 Plasma Electronics(Poster)

[19a-P04-5] Measurement of Gas Flow Rate Dependence of Incident Radical and Ion on the Substrate in RF Low-Pressure Tetramethylsilane Plasmas

〇(M1C)Koichi Ishii¹, Shun Suzuki¹, Akinori Oda¹, Yoshiaki Watanabe², Takayuki Ohta³, Hiroyuki Kousaka⁴ (1.Chiba Inst., 2.Innovation Science Co. Ltd., 3.Meijo Univ., 4.Gifu Univ.)

Keywords:Plasma CVD, Tetramethylsilane plasma

Si-DLC films have been studied in recent years because they exhibit a lower friction coefficient than ordinary DLC films. Plasma-enhanced CVD method using Tetramethylsilane (TMS) as a sorce gas is used for Si-DLC films deposition. However, the measurement of the plasma properties of TMS diluted with different inert gases during Si-DLC deposition has not been performed so far.
In this study, low-pressure capacitively coupled RF plasmas were generated using TMS gas diluted with various inert gases (Ar, Ne, and He), and the changes in the amount of radicals and ions incident on the electrodes were measured.