[19a-P05-1~8] 13.8 Optical properties and light-emitting devices

[19a-P05-5] Electroluminescence and electrical conduction characteristics measurement of Er/O co-doped Si diode incorporating nanopillar structure

〇Ryo Furuse¹, Takafumi Fujimoto¹, Keinan Gi¹, Ayman abdelghafar¹, Maasa Yano¹, Yuki Chiba¹, Enrico Prati², Michele Celebrano³, Shin-ichiro Sato⁴, Takahiro Shinada⁵, Tanii Takashi¹ (1.Waseda Univ., 2.CNR Italy., 3.Politecnico di Milano, 4.QST, 5.CIES Tohoku Univ.)

Keywords:rare earth element, luminescent device, micro-fabrication

Erbium (Er) in silicon (Si) emits photons in the 1.5 μm band, which is the minimum transmission loss wave for optical communication, and has compatibility with existing CMOS devices, so it is promising for single photon source in quantum cryptography communication at telecom wavelength. However, the low fluorescence intensity of Er is a problem. We have been conducting basic research related to the emission characteristics of Er in Si, and found that increases the photoluminescence (PL) intensity from Er in nanopillar formed on SOI substrates. In this study, we fabricated Er-doped Si diode incorporating nanopillar structure and measured its electrical conduction characteristics and electroluminescence (EL) at room temperature.