[19a-Z31-1~11] 17.3 Layered materials

△ [19a-Z31-11] [Highlight]Sub 1μs programming operation in 2D heterostructured memory devices

〇Taro Sasaki¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.The Univ. of Tokyo, 2.Saitama Univ., 3.NIMS)

Keywords:2D materials, memory, non volatile memory