[19a-Z31-1~11] 17.3 Layered materials

[19a-Z31-3] Realization of p-type operation of n-type WS₂-FET by Schottky barrier control

〇Ryoichi Kato¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.The Univ. of Tokyo, 2.Saitama Univ., 3.NIMS)

Keywords:p-type FET, Schottky barrier