The 68th JSAP Spring Meeting 2021

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-Z33-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 9:00 AM - 12:15 PM Z33 (Z33)

Kazuyuki Uno(Wakayama Univ.), Oshima Yuichi(NIMS)

11:45 AM - 12:00 PM

[19a-Z33-11] Growth mechanisms of α-Ga2O3 on sapphire substrate in the initial stage

〇(M1)Hitoshi Takane1, Kentaro Kaneko1, Yuichi Ota2, Shizuo Fujita1 (1.Kyoto Univ., 2.Tokyo Metropolitan Industrial Technology Research Inst.)

Keywords:gallium oxide, mist CVD, epitaxial growth

α-Ga2O3 has attracted attentions as a promissing material for future power devices. Although lattice mismatch between α-Ga2O3 and sapphire along a-axis is as large as ~4.8 % and α-Ga2O3 is reported to be synthesized under the condition of 1000 ℃•44 kbar, α-Ga2O3 can be grown under the condition of ~500 ℃ and atmosphric condition by means of mist CVD method. The reason of α-Ga2O3 growth by mist CVD is remain to be known. Therefore, in this study, we paid attentions to the initial stage of α-Ga2O3 growth by mist CVD and tried to figure out the growth mechanisms.