[19p-P02-1~22] 17 Nanocarbon Technology(Poster)

[19p-P02-18] Development of low-damage process to fabricate graphene transistors

〇Issei Watanabe¹, Hirokazu Fukidome² (1.NICT, 2.RIEC Tohoku Univ.)

Keywords:graphene transistor, low-damage process, nanoscale gate structure

We developed a low-damage process to fabricate nanoscale-gate graphene transistors, which process was based on that for InGaAs-channel HEMTs with L_g of less than 50 nm and 550-GHz-f_max.