[19p-P03-1~3] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[19p-P03-2] Growth of highly-uniform InAs quantum dots on metamorphic GaInAs/GaAs in 1.5-µm wavelength region

〇Katsuyuki Watanabe¹, Jinkwan Kwoen¹, Masahiro Kakuda¹, Wenbo Zhan¹, Yasuhiko Arakawa¹ (1.Tokyo Univ.)

Keywords:quantum dots, molecular beam epitaxy, metamorphic

We have studied the improvements of both crystal quality and size uniformity of 1.5 µm band InAs quantum dots on metamorphic GaInAs/GaAs. For the former, we used an In compositional setback buffer structure, and for the latter, we inserted a GaAs layer directly under the quantum dots, both of which were found to be useful.