[19p-P06-1~9] 13.7 Compound and power electron devices and process technology

[19p-P06-3] Effect of forward bias application on 0.88 eV hole trap in hydrogen-implanted n⁺p GaN

〇Yutaka Tokuda¹, Hikaru Yoshida¹, Kazuyoshi Tomita², Tetsu Kachi², Joji Ito³, Takahide Yagi³ (1.Aichi Inst. Technol., 2.Nagoya University, 3.SHI-ATEX Co., Ltd)

Keywords:p-GaN, traps

It has been reported that 0.88 eV hole trap (H_d) is observed as a main trap in GaN grown by MOVPE and is ascribed to carbon on nitrogen site (C_N). In this work, we have studied the effect of minority (electron) carrier injection into p-GaN on H_d in hydrogen-implanted n⁺p GaN with DLTS. After implantation, DLTS peak heights for H_d decrease, suggesting the formation of complex defects between carbon and implantation-produced defects, such as V_Ga and V_N. Then, DLTS peak heights for H_d increase by 1000-s minority carrier injection in the range from 200 to 340 K, which might be due to the recombination enhanced defect reaction. These behaviors for H_d are observed in He-implanted n⁺p GaN.