[19p-P06-1~9] 13.7 Compound and power electron devices and process technology

[19p-P06-7] RonA reduction of 600V vertical GaN-DMOSFET for high speed switching

〇Takuro Inamoto¹, Yuta Fukushima¹, Ryo Tanaka¹, Katsunori Ueno¹, Shinya Takashima¹, Masaharu Edo¹ (1.Fuji Electric)

Keywords:GaN, Power Device, MOSFET

We investigated RonA reduction of vertical GaN-DMOSFET which are expected to operate at high speed and with a large capacity. As a result of optimizing the donor concentration of the drift layer and the JFET region, it was found that RonA 1 mΩcm² or less can be realized on 600V device.