[19p-Z13-1~14] 6.1 Ferroelectric thin films

▼ [19p-Z13-9] Lowering Crystallization Temperature of Lead Zirconate Titanate (PZT) Thin Film Synthesized by Solution-Combustion Synthesis Method using a Lead Titanate (PTO) Seeding Layer

〇(M2)ZHONGZHENG SUN¹, Phan Trong Tue¹, Yutaka Majima¹ (1.Tokyo Tech)

Keywords:PZT Ferroelectric Thin-films, Solution-Combustion Synthesis, Seeding Layer

Nowadays, flexible electronics gather increasing attention, however, to apply the most widely used ferroelectric PZT material on flexible substrates such as polyimide, a processing temperature as low as 350 ^oC is normally required. It has been reported that the perovskite transformation of PZT is a nucleation-controlled process, thus introducing a seeding layer, such as commonly used PbTiO₃ (PTO), could decrease the surface energy leading to increasing the kinetics of the nucleation, and hence, the crystallization temperature could be lowered. Based on previous study where we proposed the solution-combustion synthesis (SCS) approach, hereafter so-called SCS-PZT, for fabrication of PZT thin-films at 450 ^oC, which is far lower than the conventional crystallization temperature of PZT (>600 ^oC). In this study, we combine the SCS method with introduction of a PbTiO₃ (PTO) seeding layer for further lowering the crystallization temperature. From the SEM result, the nucleation of crystallized perovskite phase was clearly observed for the SCS-PZT thin film with the PTO seeding layer, as compared to the film without the seeding layer under 400 ^oC. The result suggests that the PTO seeding layer could lower the crystallization temperature of SCS-PZT thin film.