〇Yasuhide Hashimoto¹, Morimoto Akiharu², Yoshida Masahiro¹ (1.College of Sci. and Eng., Kanazawa Univ., 2.Grad. School of Nat. Sci. and Tech., Kanazawa Univ.)

11:45 AM - 12:00 PM

[18a-Z20-8] Bulk Photovoltaic Effect in BiFeO₃ Thin Film Capacitors

〇Ren Kato¹, Seiji Nakashima¹, Hironori Fujisawa¹ (1.Univ. of Hyogo)

Oral presentation

[19a-Z13-1~8] 6.1 Ferroelectric thin films

Fri. Mar 19, 2021 10:00 AM - 12:00 PM Z13 (Z13)

Shinya Yoshida(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:00 AM - 10:15 AM

[19a-Z13-1] Investigation of the growth mechanism of BiFeO₃ films on sputtering method

〇Risa Kikuchi¹, Mikio Murase¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

10:15 AM - 10:30 AM

△ [19a-Z13-2] Domain control of ferromagnetic and ferroelectric of BiFe_0.9Co_0.1O₃ thin films using trailing fields

〇Takuma Ito¹, Marin Katsumata¹, Kei Shigematsu^1,2, Masaki Azuma^1,2 (1.MSL Tokyo Tech., 2.KISTEC)

10:30 AM - 10:45 AM

△ [19a-Z13-3] Characterization of tetragonal (1-x)(Bi,Na)TiO₃- xBaTiO₃ films deposited on various substrates.

〇Keisuke Ishihama¹, Akinori Tateyama¹, Takao Shimizu^1,3, Yusuke Sato², Wakiko Yamaoka², Risako Tsurumaru², Hiroshi Funakubo¹ (1.Tokyo Tech., 2.TDK corp., 3.NIMS)

10:45 AM - 11:00 AM

△ [19a-Z13-4] Effect of raw material concentration on preparation of (Bi,K)TiO₃ thin films
by hydrothermal method

〇(M1C)Rurika Kubota¹, Akinori Tteyama¹, Yoshiharu Ito¹, Takahisa Shiraishi¹, Minoru Kurosawa¹, Hiroshi Funakubo¹ (1.Tokyo Tech)

11:00 AM - 11:15 AM

△ [19a-Z13-5] Piezoelectric properties of (Bi,K)TiO₃ films deposited at less than 100°C

〇Yoshiharu Ito¹, Akinori Tateyama¹, Rurika Kubota¹, Takahisa Shiraishi¹, Minoru Kurosawa¹, Hiroshi Funakubo¹ (1.Tokyo Tech.)

11:15 AM - 11:30 AM

[19a-Z13-6] Piezoelectric properties of epitaxial (K, Na)NbO₃ thin films grown on Si substrates

〇Kiyotaka Tanaka¹, Yoshimasa Sai¹, Yoshiyuki Kawata¹, Sang-Hyo Kweon¹, Goon Tan², Isaku Kanno¹ (1.Kobe Univ., 2.Osaka Pref. Univ.)

11:30 AM - 11:45 AM

△ [19a-Z13-7] BAW transformer using the combination of high and low dielectric constant films

〇(B)Hiroki Kishi^1,2, Sarina Kinoshita^1,2, Kouta Izumi^1,2, Takahiko Yanagitani^1,2,3 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST)

11:45 AM - 12:00 PM

△ [19a-Z13-8] Enhancement of electromechanical coupling coefficient k_t² of ZnO thin film BAW resonators by Mg or Ca doping in the UHF frequency ranges

〇Kota Izumi^1,2, Takahiko Yanagitani^1,2,3 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST)

Oral presentation

[19p-Z13-1~14] 6.1 Ferroelectric thin films

Fri. Mar 19, 2021 1:30 PM - 5:15 PM Z13 (Z13)

Takeshi Kobayashi(AIST), Seiji Nakashima(Univ. of Hyogo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 1:45 PM

△ [19p-Z13-1] Growth and ferroelectric properties of epitaxial (Al_1-xSc_x)N films.

〇Shinnosuke Yasuoka¹, Takao Shimizu², Hiroshi Funakubo¹ (1.Tokyo Tech., 2.NIMS)

1:45 PM - 2:00 PM

△ [19p-Z13-2] Temperature dependence of the ferroelectricity in (Sc_xAl_1-x)N thin films

〇(M1C)Ryoichi Mizutani¹, Shinnosuke Yasuoka¹, Takao Shimizu², Hiroshi Funakubo¹ (1.Tokyo Tech., 2.NIMS)

2:00 PM - 2:15 PM

[19p-Z13-3] Epitaxial growth of Al_1-xSc_xN thin films on Si substrates using TiN buffer layer

〇Kohei Miyaji¹, Mikio Murase¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

2:15 PM - 2:30 PM

[19p-Z13-4] Investigation of electrical and piezoelectric properties of 0.1CeO₂-0.9HfO₂ films

〇Takahisa Shiraishi^1,2, Takanori Kiguchi², Toyohiko J. Konno², Hiroshi Funakubo¹ (1.Tokyo tech, 2.Tohoku Univ)

2:30 PM - 2:45 PM

[19p-Z13-5] Preparation of Y doped HZO ferroelectric thick films at room temperature by the sputtering method and their electrical and piezoelectric properties

〇(PC)Reijiro Shimura¹, Takanori Mimura¹, Akinori Tateyama¹, Takao Shimizu^1,2, Takahisa Shiraishi¹, Hiroshi Funakubo¹ (1.Tokyo Tech. SMCT, 2.NIMS)

2:45 PM - 3:00 PM

△ [19p-Z13-6] Fabrication and Characteristics of MEMS Unimorph Cantilever with Y₂O₃-HfO₂ Ferroelectric Thin Film

〇Ryo Ebihara¹, Shinya Yoshida¹, Reijirou Shimura², Hiroshi Funakubo², Shuji Tanaka¹ (1.Tohoku Univ., 2.Tokyo Tech. SMCT)

3:00 PM - 3:15 PM

△ [19p-Z13-7] Characterization of piezoelectric MEMS vibration energy harvester
with two-degree-of-freedom system under impulsive force

〇(M1)Aphayvong Sengsavang¹, Takeshi Yoshimura¹, Kensuke Kanda², Shuichi Murakami³, Norifumi Fujimura¹ (1.Osaka Pref. Univ, 2.Uni. of Hyogo, 3.ORIST)

3:30 PM - 3:45 PM

[19p-Z13-8] STEM-EELS analysis on epitaxial growth mechanism of PZT thin films by CSD method

〇Takanori Kiguchi¹, Masaya Aihara¹, Naoki Shibuya¹, Takahisa Shiraishi^1,2, Toyohiko J. Konno¹ (1.Tohoku Univ., 2.Tokyo Tech.)

3:45 PM - 4:00 PM

▼ [19p-Z13-9] Lowering Crystallization Temperature of Lead Zirconate Titanate (PZT) Thin Film Synthesized by Solution-Combustion Synthesis Method using a Lead Titanate (PTO) Seeding Layer

〇(M2)ZHONGZHENG SUN¹, Phan Trong Tue¹, Yutaka Majima¹ (1.Tokyo Tech)

4:00 PM - 4:15 PM

[19p-Z13-10] Domain structures of PbTiO₃ epitaxial thin films prepared on Sr(Zr, Ti)O₃-buffered substrates with various lattice constants

Tomohide Morikawa¹, 〇Masanori Kodera², Takao Shimizu³, Yoshitaka Ehara⁴, Hiroshi Funakubo^1,2 (1.Tokyo Tech., 2.Tokyo Tech., MCES, 3.NIMS, 4.NDA)

4:15 PM - 4:30 PM

△ [19p-Z13-11] Characterization of polar axis-oriented tetragonal epitaxial PZT films with various Zr/(Zr+Ti) ratio

〇(M1C)Haruka Okoshi¹, Tomohide Morikawa¹, Akinori Tateyama¹, Masanori Kodera¹, Takahisa Shiraishi¹, Yoshitaka Ehara², Hiroshi Funakubo¹ (1.Tokyo Tech., 2.National Defense Academy)

4:30 PM - 4:45 PM

△ [19p-Z13-12] Piezoelectricity of PTO epitaxial self-supporting thin film

〇(B)Satoshi Tokai^1,2, Sota Kuninobu^1,2, Takahiko Yanagitani^1,2,3 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST)

4:45 PM - 5:00 PM

▲ [19p-Z13-13] Water Splitting by Photoelectrochemical reaction of (Pb,La)TiO₃ Ferroelectric Thin Films

〇SangHyo Kweon¹, Yoshinaka Daisuke¹, Yoshiharu Mukoyama², Kanno Isaku¹ (1.Kobe Univ., 2.Tokyo Denki Univ.)

5:00 PM - 5:15 PM

△ [19p-Z13-14] Electro-optic effect in single domain Pb(Zr, Ti)O₃ thin films

〇Shinya Kondo^1,2, Tomoaki Yamada², Masahito Yoshino², Akira Kishimoto¹, Takashi Teranishi¹, Takanori Nagasaki² (1.Okayama Univ., 2.Nagoya Univ.)

Sessions

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[18a-Z20-1~8] 6.1 Ferroelectric thin films

[18a-Z20-1] Evaluation of solvent dependence of electrical properties of organic piezoelectric P(VDF-TrFE)

[18a-Z20-2] Evaluation of static characteristics of FET using IGZO for channel layer

[18a-Z20-3] 10⁹ cycle-High Endurance SBT-Based FeFET with Good Scalability

[18a-Z20-4] Features of SBT-Based FeFET : Comparison with HfO₂-Based FeFET

[18a-Z20-5] Breakdown of ion-polarization-correspondence and Born effective charges: Algebraic formulas of accurate polarization under field

[18a-Z20-6] Permittivity for Depolarization Field of Ferroelectric and Hidden Mechanisms: Ab initio Calculations

[18a-Z20-7] Influence of Pt/SRO top electrode on resistance switching of Nd-doped BFO ferroelectric films

[18a-Z20-8] Bulk Photovoltaic Effect in BiFeO₃ Thin Film Capacitors

[19a-Z13-1~8] 6.1 Ferroelectric thin films

[19a-Z13-1] Investigation of the growth mechanism of BiFeO₃ films on sputtering method

△ [19a-Z13-2] Domain control of ferromagnetic and ferroelectric of BiFe_0.9Co_0.1O₃ thin films using trailing fields

△ [19a-Z13-3] Characterization of tetragonal (1-x)(Bi,Na)TiO₃- xBaTiO₃ films deposited on various substrates.

△ [19a-Z13-4] Effect of raw material concentration on preparation of (Bi,K)TiO₃ thin films
by hydrothermal method

△ [19a-Z13-5] Piezoelectric properties of (Bi,K)TiO₃ films deposited at less than 100°C

[19a-Z13-6] Piezoelectric properties of epitaxial (K, Na)NbO₃ thin films grown on Si substrates

△ [19a-Z13-7] BAW transformer using the combination of high and low dielectric constant films

△ [19a-Z13-8] Enhancement of electromechanical coupling coefficient k_t² of ZnO thin film BAW resonators by Mg or Ca doping in the UHF frequency ranges

[19p-Z13-1~14] 6.1 Ferroelectric thin films

△ [19p-Z13-1] Growth and ferroelectric properties of epitaxial (Al_1-xSc_x)N films.

△ [19p-Z13-2] Temperature dependence of the ferroelectricity in (Sc_xAl_1-x)N thin films

[19p-Z13-3] Epitaxial growth of Al_1-xSc_xN thin films on Si substrates using TiN buffer layer

[19p-Z13-4] Investigation of electrical and piezoelectric properties of 0.1CeO₂-0.9HfO₂ films

[19p-Z13-5] Preparation of Y doped HZO ferroelectric thick films at room temperature by the sputtering method and their electrical and piezoelectric properties

△ [19p-Z13-6] Fabrication and Characteristics of MEMS Unimorph Cantilever with Y₂O₃-HfO₂ Ferroelectric Thin Film

△ [19p-Z13-7] Characterization of piezoelectric MEMS vibration energy harvester
with two-degree-of-freedom system under impulsive force

[19p-Z13-8] STEM-EELS analysis on epitaxial growth mechanism of PZT thin films by CSD method

▼ [19p-Z13-9] Lowering Crystallization Temperature of Lead Zirconate Titanate (PZT) Thin Film Synthesized by Solution-Combustion Synthesis Method using a Lead Titanate (PTO) Seeding Layer

[19p-Z13-10] Domain structures of PbTiO₃ epitaxial thin films prepared on Sr(Zr, Ti)O₃-buffered substrates with various lattice constants

△ [19p-Z13-11] Characterization of polar axis-oriented tetragonal epitaxial PZT films with various Zr/(Zr+Ti) ratio

△ [19p-Z13-12] Piezoelectricity of PTO epitaxial self-supporting thin film

▲ [19p-Z13-13] Water Splitting by Photoelectrochemical reaction of (Pb,La)TiO₃ Ferroelectric Thin Films

△ [19p-Z13-14] Electro-optic effect in single domain Pb(Zr, Ti)O₃ thin films

Authenticate

Sessions

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[18a-Z20-1~8] 6.1 Ferroelectric thin films

[19a-Z13-1~8] 6.1 Ferroelectric thin films

△ [19a-Z13-2] Domain control of ferromagnetic and ferroelectric of BiFe0.9Co0.1O3 thin films using trailing fields

△ [19a-Z13-3] Characterization of tetragonal (1-x)(Bi,Na)TiO3- xBaTiO3 films deposited on various substrates.

△ [19a-Z13-4] Effect of raw material concentration on preparation of (Bi,K)TiO3 thin filmsby hydrothermal method

△ [19a-Z13-5] Piezoelectric properties of (Bi,K)TiO3 films deposited at less than 100°C

△ [19a-Z13-7] BAW transformer using the combination of high and low dielectric constant films

△ [19a-Z13-8] Enhancement of electromechanical coupling coefficient kt2 of ZnO thin film BAW resonators by Mg or Ca doping in the UHF frequency ranges

[19p-Z13-1~14] 6.1 Ferroelectric thin films

△ [19p-Z13-1] Growth and ferroelectric properties of epitaxial (Al1-xScx)N films.

△ [19p-Z13-2] Temperature dependence of the ferroelectricity in (ScxAl1-x)N thin films

△ [19p-Z13-6] Fabrication and Characteristics of MEMS Unimorph Cantilever with Y2O3-HfO2 Ferroelectric Thin Film

△ [19p-Z13-7] Characterization of piezoelectric MEMS vibration energy harvesterwith two-degree-of-freedom system under impulsive force

▼ [19p-Z13-9] Lowering Crystallization Temperature of Lead Zirconate Titanate (PZT) Thin Film Synthesized by Solution-Combustion Synthesis Method using a Lead Titanate (PTO) Seeding Layer

△ [19p-Z13-11] Characterization of polar axis-oriented tetragonal epitaxial PZT films with various Zr/(Zr+Ti) ratio

△ [19p-Z13-12] Piezoelectricity of PTO epitaxial self-supporting thin film

▲ [19p-Z13-13] Water Splitting by Photoelectrochemical reaction of (Pb,La)TiO3 Ferroelectric Thin Films

△ [19p-Z13-14] Electro-optic effect in single domain Pb(Zr, Ti)O3 thin films

Authenticate

△ [19a-Z13-2] Domain control of ferromagnetic and ferroelectric of BiFe_0.9Co_0.1O₃ thin films using trailing fields

△ [19a-Z13-3] Characterization of tetragonal (1-x)(Bi,Na)TiO₃- xBaTiO₃ films deposited on various substrates.

△ [19a-Z13-4] Effect of raw material concentration on preparation of (Bi,K)TiO₃ thin films
by hydrothermal method

△ [19a-Z13-5] Piezoelectric properties of (Bi,K)TiO₃ films deposited at less than 100°C

△ [19a-Z13-8] Enhancement of electromechanical coupling coefficient k_t² of ZnO thin film BAW resonators by Mg or Ca doping in the UHF frequency ranges

△ [19p-Z13-1] Growth and ferroelectric properties of epitaxial (Al_1-xSc_x)N films.

△ [19p-Z13-2] Temperature dependence of the ferroelectricity in (Sc_xAl_1-x)N thin films

△ [19p-Z13-6] Fabrication and Characteristics of MEMS Unimorph Cantilever with Y₂O₃-HfO₂ Ferroelectric Thin Film

△ [19p-Z13-7] Characterization of piezoelectric MEMS vibration energy harvester
with two-degree-of-freedom system under impulsive force

▲ [19p-Z13-13] Water Splitting by Photoelectrochemical reaction of (Pb,La)TiO₃ Ferroelectric Thin Films

△ [19p-Z13-14] Electro-optic effect in single domain Pb(Zr, Ti)O₃ thin films