[19p-Z14-1~18] 6.3 Oxide electronics

▼ [19p-Z14-8] Investigation of impact of orientation on electronic properties in epitaxially grown MoO₂ films

〇Shuxin Zhang¹, Takuto Soma¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.MCES)

Keywords:epitaxial growth, thin film, rutile

The structural instability of rutile compounds has been investigated intensively to reveal correlations between structural and electronic phase transitions, as represented by a metal-insulator transition in VO₂. Recent discovery of superconductivity in strained rutile-type RuO₂ films further draws interests of lattice engineering for exploring exotic properties. In order to investigate impact of lattice strain on phase instability, orientation control is a starting point. In this study, we focus on MoO₂ with distorted rutile-type structure. The epitaxial growth and transport properties of MoO₂ with various orientations are reported.