2:45 PM - 3:00 PM
[19p-Z22-5] Characterization of 3D controlled resistance and absorption for high-efficiency VCSEL by proton implantation -II
Keywords:semiconductor laser, VCSEL, efficiency
Proton imprantation method is one of techniques of current confinement (electrical resistance control) of VCSEL. Based on this mechnism of the carrier passivation/trapping, we have proposed a three-dimensionally control of both light absroption and electrical resistance by a proton implantation process. In the previous presentation, we reported the change of the lasing performance as the initial experimental results. In this time, we made a new devicec with a different wafer structure, and evaluated the lasing characteristics in detail. Improved slope efficiency and PCE were confirmed.