[19p-Z22-1~16] 3.13 Semiconductor optical devices

[19p-Z22-6] Simulation for Structure Dependence of Polarization Selectivity in a Microcavity

〇Yuma Kitagawa¹, Fumie Watanabe¹, Yuta Suzuki¹, Shin-ichiro Tezuka¹ (1.Yokogawa Electric Corp.)

Keywords:microcavity, VCSEL, polarization control

Polarization stability is indispensable for an optical microcavity in a laser such as a vertical cavity surface emitting laser. We previously introduced a slit structure in a microcavity to control polarization and confirmed its effect by calculating electric fields of TE and TM modes in the microcavity, and by fabricating actual devices with the structure. However, because the parameters of the slit structure used were fixed and diffraction loss in the cavity was not discussed quantitatively in the previous calculation, the dependence of the diffraction loss for each polarization on the slit structure has not been clarified. Here we report in the results that electric fields of TE and TM modes are calculated for three structure parameters which are the gap, the height, and the width of the slit, and the dependences of the diffraction loss on these parameters are quantified.