The 68th JSAP Spring Meeting 2021

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-Z25-1~14] 13.7 Compound and power electron devices and process technology

Fri. Mar 19, 2021 1:00 PM - 4:45 PM Z25 (Z25)

Masashi Kato(Nagoya Inst. of Tech.)

1:15 PM - 1:30 PM

[19p-Z25-2] Fabrication of a 150 nm Gate AlGaN/GaN HEMT Using i-Line Stepper

〇Yuji Ando1, Hidemasa Takahashi1, Akio Wakejima3, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Institute of Technology)

Keywords:GaN, HEMT